1 features - gain bandwidth product f t = 1.1 ghz at v ce = 3 v, i c = 20 ma f t = 1.5 ghz at v ce = 5 v, i c = 30 ma - power gain |s 21 | 2 = 3.0 db at v ce = 3 v, i c = 10 ma, f = 1 ghz - noise figure nf = 1.8 db at v ce = 3 v, i c = 10 ma, f = 1 ghz applications - broadband amplifier application under 1ghz - saw filter driver in tv tuners absolute maximum ratings (t a = 25 ) collector to bas e voltage collector to em itter voltage em itter to bas e voltage collector current total power dissipation operating junction temperature storage temperature 150 i c 100 ma mw unit bv cbo 20 v parameter symbol p tot 200 ratings t stg -65 ~ 150 v bv ebo 3 v bv ceo 8 t j caution : e lectro s tatic d ischarge sensitive device pin configuration 1. base 2. emitter 3. collector sot-323 unit in mm 2.1 0.1 1.25 0.05 1.30 0.1 2.0 0.2 0.30 0.1 1 2 3 0.90 0.1 0~0.1 0.1 min. 0.15 0.05 TBN6501U si npn transistor semiconductor
2 electrical characteristics (t a = 25 ) db - 3.0 - v ce = 3 v, i c = 20 ma, f = 1 ghz |s 21 | 2 insertion power gain ghz - 1.5 1.3 v ce = 5 v, i c = 30 ma 250 - 50 v ce = 3 v, i c = 10 ma h fe dc current gain ghz - 1.1 0.9 v ce = 3 v, i c = 20 ma f t gain bandwidth product db - 4.0 - v ce = 5 v, i c = 30 ma, f = 1 ghz - 1.8 - v ce = 3 v, i c = 10 ma, f = 1 ghz nf noise figure ? 0.5 - - v cb = 15 v, i e = 0 ma i cbo collector cut-off current ? 10 - - v ce = 8 v, i b = 0 ma i ceo ? 0.5 - - v eb = 2 v, i c = 0 ma i ebo emitter cut-off current 2.0 typ. - max. pf - v cb = 3 v, i e = 0 ma, f = 1 mhz c re reverse transfer capacitance unit min. test conditions symbol parameter h fe classification 125 - 250 80 - 160 h fe value sd1 sd2 marking TBN6501U
3 typical characteristics ( t a = 25 , unless otherwise specified) power dissipation vs. ambient temperature dc current gain vs. collector current collector current vs. base to emitter voltage reverse transfer capacitance vs. collector to base voltage 0 25 50 75 100 125 150 0 50 100 150 200 250 300 power dissipation, p c (mw) ambient temperature, t a ( o c) 01234567 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 f = 1 mhz reverse transfer capacitance, c re (pf) collector to base voltage, v cb (v) 0.1 1 10 100 0 50 100 150 200 250 300 v ce = 3 v dc current gain, h fe collector current, i c (ma) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 v ce = 3 v collector current, i c [ma] base to emitter voltage, v be [v] TBN6501U
4 gain bandwidth product vs. collector current collector current vs. collector to emitter voltage 0123456 0 5 10 15 20 25 30 35 40 45 50 i b step = 50 a collector current, i c (ma) collector to emitter voltage, v ce (v) 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 gain bandwidth product, f t (ghz) collector current, i c (ma) v ce = 3 v v ce = 5 v insertion power gain vs. collector current maximum available gain vs. collector current 10 100 0 1 2 3 4 5 6 7 8 9 maximum available gain, mag (db) collector current, i c (ma) v ce = 3 v v ce = 5 v f = 1 ghz 10 100 0 1 2 3 4 5 6 insertion power gain, |s 21 | 2 (db) collector current, i c (ma) v ce = 3 v v ce = 5 v f = 1 ghz TBN6501U
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